Characterization of 193 nm Chemically Amplified Resist during Post Exposure Bake and Post Exposure Delay

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-12-30

著者

• LEE Eun-Mi

  Physics Department, Hanyang University

• LEE Young-Mi

  Physics Department, Hanyang University

• LEE Young-Mi

  Department of Oriental Pharmacy, College of Pharmacy, Wonkwang University

• LEE Eun-Mi

  Department of Microbiology, College of Medicine, Konkuk University

• SOHN Young-Soo

  Department of Electrical Engineering, Pohang University of Science and Technology

• Lee Young-mi

  Physics Department Hanyang University

• Lee Eun-mi

  Physics Department Hanyang University

• Sung Moon-gyu

  Department Of Physics Hanyang University

• Lee Eun-mi

  Department Of Dentistry Kyungpook National University Hospital

• Sohn Young-soo

  Department Of Electrical Engineering Pohang University Of Science And Technology

• Sohn Young-soo

  Physics Department Hanyang University

• Oh Hye-keun

  Physics Department Hanyang University

• Oh Hye-keun

  Department Of Physics Hanyang University

• Oh Hye-keun

  Department Of Applied Physics Hanyang University

• Lee Young-mi

  Department Of Nursing Hanbuk University

• Oh H‐k

  Physics Department Hanyang University

• Lee Eun-mi

  Department Of Environmental Engineering Seoul National Polytechnic University

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• Optical Properties of the SiO-Co Composite Thin Films
• Development of Multichannel Ellipsometry with Synchronously Rotating Polarizer and Analyzer(Instrumentation, Measurement, and Fabrication Technology)
• Characterization of 193 nm Chemically Amplified Resist during Post Exposure Bake and Post Exposure Delay
• Photoresist Exposure Parameter Extraction from Refractive Index Change during Exposure
• Resist Reflow Modeling Including Surface Tension and Bulk Effect
• Mask Haze Measurement by Spectroscopic Ellipsometry
• 32 nm Half Pitch Formation with High-Numerical-Aperture Single Exposure
• Patterning of 32 nm $1:1$ Line and Space by Resist Reflow Process
• A Mask Generation Approach to Double Patterning Technology with Inverse Lithography
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• Critical Dimension Control for 32 nm Node Random Contact Hole Array Using Resist Reflow Process
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• Optical Investigation of Deep Ultraviolet Degradation of Pellicles
• Position Shift Analysis in Resist Reflow Process for Sub-50 nm Contact Hole
• Relationship between dental calcification stages and skeletal maturity indicators in Korean individual
• Sensitivity of Simulation Parameter for Critical Dimension
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• An Effective Method for Production of Metal Free Water through Chitosan Deminerilization systems
• Some Properties of Some Graft derivatives of Chitosan
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• Optical Properties of the SiO–Co Composite Thin Films
• Numerical Investigation of Defect Printability in Extreme Ultraviolet (EUV) Reflector: Ru/Mo/Si Multilayer System
• The Extraction of Develop Parameters by Using Cross-Sectional Critical Shape Error Method
• Resist Pattern Collapse with Top Rounding Resist Profile
• Mask Haze Measurement by Spectroscopic Ellipsometry
• Loss of Productivity due to Depression among Korean Employees
• Anisotropic Resist Reflow Process Simulation for 22 nm Elongated Contact Holes
• Effect of Extreme Ultraviolet Light Scattering from the Rough Absorber and Buffer Side Wall

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