Anisotropic Resist Reflow Process Simulation for 22 nm Elongated Contact Holes
スポンサーリンク
概要
- 論文の詳細を見る
Pattern size decreases as circuit integration increases. Resistance increases as the cross section of a contact hole (CH) decreases. Thus, the use of an elongated CH is suggested as a method of solving this problem. It is too difficult to obtain a small CH and an elongated CH by optical proximity correction only. Even if double patterning can be used to improve the integration of line and space, it is not easy to apply it to form an elongated CH. We suggest the use of a resist reflow process method to form 22 nm elongated CHs from a large developed size pattern. We observed RRP behavior in elongated CHs by experiment and simulation, and applied optical proximity correction to compensate the bulk effect after the resist reflow process. As a result, we made uniform 22 nm elongated CHs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-06-25
著者
-
An Ilsin
Department Of Applied Physics Hanyang University
-
Oh Hye-keun
Department Of Applied Physics Hanyang University
-
Park Joon-Min
Department of Applied Physics, Hanyang University, Ansan 426-791, Korea
-
Hong Joo-Yoo
Department of Applied Physics, Hanyang University, Ansan 426-791, Korea
-
Kim Dai-Gyoung
Department of Applied Mathematics, Hanyang University, Ansan 426-791, Korea
関連論文
- A Single Zone Azimuth Calibration for Rotating Compensator Multichannel Ellipsometry
- Optical Properties of the SiO-Co Composite Thin Films
- Development of Multichannel Ellipsometry with Synchronously Rotating Polarizer and Analyzer(Instrumentation, Measurement, and Fabrication Technology)
- Characterization of 193 nm Chemically Amplified Resist during Post Exposure Bake and Post Exposure Delay
- Mask Haze Measurement by Spectroscopic Ellipsometry
- 32 nm Half Pitch Formation with High-Numerical-Aperture Single Exposure
- Patterning of 32 nm $1:1$ Line and Space by Resist Reflow Process
- A Mask Generation Approach to Double Patterning Technology with Inverse Lithography
- Optimum Biasing for 45 nm Node Chromeless and Attenuated Phase Shift Mask
- Critical Dimension Control for 32 nm Node Random Contact Hole Array Using Resist Reflow Process
- Photoresist Adhesion Effect of Resist Reflow Process
- Resist Reflow Modeling Including Surface Tension and Bulk Effect
- Resist Reflow Process for 32 nm Node Arbitrary Pattern
- Optical Investigation of Deep Ultraviolet Degradation of Pellicles
- Position Shift Analysis in Resist Reflow Process for Sub-50 nm Contact Hole
- Morphological Development and Etching of Gold Thin Film under UV-exposure in Chlorine-based Liquids
- Sensitivity of Simulation Parameter for Critical Dimension
- Heat Conduction to Photoresist on Top of Wafer during Post Exposure Bake Process: I. Numerical Approach
- Polarization Effects on the Elastic Dust Grain Collisions in Complex Dusty Plasmas
- Haze Defects due to Pellicle Adhesive
- Which Mask is Preferred for Sub-60 nm Node Imaging?
- Heat Conduction to Photoresist on Top of Wafer during Post Exposure Bake Process: II. Application
- Ellipsometry for Pellicle-Covered Surface
- Photoinduced Patterning of Gold Thin Film
- A Single Zone Azimuth Calibration for Rotating Compensator Multichannel Ellipsometry
- Optical Properties of the SiO–Co Composite Thin Films
- Rubbed Polyimide Layers Studied by Rotating Sample and Compensator Spectroscopic Ellipsometry
- Mask Haze Measurement by Spectroscopic Ellipsometry
- Anisotropic Resist Reflow Process Simulation for 22 nm Elongated Contact Holes
- Development of Calibration-Free Imaging Ellipsometry Using Dual-Rotation of Polarizer and Analyzer