Park Joon-Min | Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

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概要

• Park Joon-Minの詳細を見る
• 同名の論文著者
• Department of Applied Physics, Hanyang University, Ansan 426-791, Koreaの論文著者

関連著者

• Oh Hye-keun

  Department Of Applied Physics Hanyang University

• Park Joon-Min

  Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

• An Ilsin

  Department Of Applied Physics Hanyang University

• Hong Joo-Yoo

  Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

• Jeong Heejun

  Department Of Applied Physics Hanyang University

• Kim Eun-jin

  Department Of Physiology Institute Of Health Sciences Gyeongsang National University School Of Medic

• Kang Young-Min

  Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

• You Jee-Hye

  Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

• Oh Hye-Keun

  Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

• Kim Youngsang

  Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

• Jeong Heejun

  Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

• Park Joonwoo

  Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

• Kim Eun-Jin

  Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

• Kim Dai-Gyoung

  Department of Applied Mathematics, Hanyang University, Ansan 426-791, Korea

• KIM Eun-jin

  Department of Applied Mathematics, University of Sheffield, Sheffield, S3 7RH, U.K.

• Jung Minhee

  Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

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著作論文

• 32 nm Half Pitch Formation with High-Numerical-Aperture Single Exposure
• Patterning of 32 nm $1:1$ Line and Space by Resist Reflow Process
• Critical Dimension Control for 32 nm Node Random Contact Hole Array Using Resist Reflow Process
• Photoresist Adhesion Effect of Resist Reflow Process
• Resist Reflow Process for 32 nm Node Arbitrary Pattern
• Position Shift Analysis in Resist Reflow Process for Sub-50 nm Contact Hole
• Anisotropic Resist Reflow Process Simulation for 22 nm Elongated Contact Holes

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