Sensitivity of Simulation Parameter for Critical Dimension
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概要
- 論文の詳細を見る
In this study, lithography processes were modeled and simulated for the optimized parameters of 365 nm, 248 nm, and 193 nm resists. Also, sensitivity of those parameters for the critical dimension (CD) and side wall angle of simulated profiles was analyzed using the response surface methodology (RSM). Through the quantization of sensitivity of these easy-to-optimize simulation parameters, we quantified lithography processes and discussed the different phenomenon of the chemically amplified resist (CAR) compared to the non-CAR. To validate our results, the quantitative comparison between our results and those of a commercial tool was shown.
- 社団法人応用物理学会の論文
- 2002-06-30
著者
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Oh Hye-keun
Department Of Applied Physics Hanyang University
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Oh Hye-keu
Department Of Physics Hanyang University
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Kim Sang-kon
Department Of Physics Hanyang University
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Kim Sang-Kon
Department of Applied Physics, Hanyang University, Ansan 426-791, Korea
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