Sensitivity of Process Parameters on Pattern Formation of Litho--Cure--Litho--Etch Process

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概要

• 論文の詳細を見る

• Semiconductor manufacturing has depended on the high resolution of optical lithography. As the wavelength becomes shorter for the resolution, the light source and optics become increasingly complex and expensive. Therefore, to extend optical lithography's useful life at greater resolution, the litho--cure--litho--etch (LCLE) process has been introduced as an alternative technique. In this study, the LCLE process is modelled and simulated to explore the pattern formation between the two lithography processes (litho 1 and litho 2). This process allows for the physical phenomena of pattern formation to be better understood. The sensitivity of simulation parameters for simulated profiles is analyzed by Taguchi analysis. Through the sensitivity of these easy-to-optimize parameters, LCLE lithography processes can be effectively predicted.

• 2012-06-25

著者

• Kim Sang-Kon

  Department of Applied Physics, Hanyang University, Ansan 426-791, Korea

関連論文

• A Mask Generation Approach to Double Patterning Technology with Inverse Lithography
• Sensitivity of Simulation Parameter for Critical Dimension
• Sensitivity of Process Parameters on Pattern Formation of Litho--Cure--Litho--Etch Process

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