Development of Multichannel Ellipsometry with Synchronously Rotating Polarizer and Analyzer(Instrumentation, Measurement, and Fabrication Technology)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-06-15
著者
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Bang Kyung-yoon
Department Of Physics Hanyang University
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An I
Hanyang Univ. Kyunggi‐do Kor
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An Ilsin
Department Of Applied Physics Hanyang University
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Park Myung-gyu
Department Of Physics Hanyang University
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Oh Hye-keun
Department Of Physics Hanyang University
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Oh Hye-keun
Department Of Applied Physics Hanyang University
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KIM Hanjung
Department of Control and Instrumentation, Hankyong National University
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Kim Hanjung
Department Of Control And Instrumentation Hankyong National University
関連論文
- A Single Zone Azimuth Calibration for Rotating Compensator Multichannel Ellipsometry
- Optical Properties of the SiO-Co Composite Thin Films
- Development of Multichannel Ellipsometry with Synchronously Rotating Polarizer and Analyzer(Instrumentation, Measurement, and Fabrication Technology)
- Characterization of 193 nm Chemically Amplified Resist during Post Exposure Bake and Post Exposure Delay
- Resist Reflow Modeling Including Surface Tension and Bulk Effect
- Mask Haze Measurement by Spectroscopic Ellipsometry
- 32 nm Half Pitch Formation with High-Numerical-Aperture Single Exposure
- Patterning of 32 nm $1:1$ Line and Space by Resist Reflow Process
- A Mask Generation Approach to Double Patterning Technology with Inverse Lithography
- Optimum Biasing for 45 nm Node Chromeless and Attenuated Phase Shift Mask
- Critical Dimension Control for 32 nm Node Random Contact Hole Array Using Resist Reflow Process
- Photoresist Adhesion Effect of Resist Reflow Process
- Resist Reflow Modeling Including Surface Tension and Bulk Effect
- Resist Reflow Process for 32 nm Node Arbitrary Pattern
- Optical Investigation of Deep Ultraviolet Degradation of Pellicles
- Position Shift Analysis in Resist Reflow Process for Sub-50 nm Contact Hole
- Morphological Development and Etching of Gold Thin Film under UV-exposure in Chlorine-based Liquids
- Sensitivity of Simulation Parameter for Critical Dimension
- Heat Conduction to Photoresist on Top of Wafer during Post Exposure Bake Process: I. Numerical Approach
- Haze Defects due to Pellicle Adhesive
- Which Mask is Preferred for Sub-60 nm Node Imaging?
- Heat Conduction to Photoresist on Top of Wafer during Post Exposure Bake Process: II. Application
- Ellipsometry for Pellicle-Covered Surface
- Photoinduced Patterning of Gold Thin Film
- A Single Zone Azimuth Calibration for Rotating Compensator Multichannel Ellipsometry
- Optical Properties of the SiO–Co Composite Thin Films
- Rubbed Polyimide Layers Studied by Rotating Sample and Compensator Spectroscopic Ellipsometry
- Transmission-Type Radio-Frequency Single-Electron Transistor with In-Plane-Gate Single-Electron Transistor
- Mask Haze Measurement by Spectroscopic Ellipsometry
- Anisotropic Resist Reflow Process Simulation for 22 nm Elongated Contact Holes
- Development of Calibration-Free Imaging Ellipsometry Using Dual-Rotation of Polarizer and Analyzer