The Extraction of Develop Parameters by Using Cross-Sectional Critical Shape Error Method
スポンサーリンク
概要
- 論文の詳細を見る
As the minimum feature size decreases, the gap between real experimental lithography process and simulated one increases. This gap should be reduced as small as possible by inserting the correct process parameters to simulation. Unfortunately, we do not have the exact simulation parameters in most cases and we need to get more accurate parameters. Among many methods to obtain the exact parameters, we used a new automatic cross-sectional critical shape error method to get the develop parameters by comparing the experimental scanning electron microscope image with the simulated image. This new bitmap masking technique is much faster than the conventional serial cross-sectional critical shape error method.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-15
著者
-
An Ilsin
Physics Department Hanyang University
-
Oh Hye-keun
Physics Department Hanyang University
-
Oh Hye-Keun
Physics Department, Hanyang University, Ansan, Kyunggi-Do, 425-791, Korea
-
KIm Hyoung-Hee
Physics Department, Hanyang University, Ansan, Kyunggi-Do, 425-791, Korea
-
Park Jun-Tack
Physics Department, Hanyang University, Ansan, Kyunggi-Do, 425-791, Korea
-
Choi Jung-Wook
Physics Department, Hanyang University, Ansan, Kyunggi-Do, 425-791, Korea
-
An Ilsin
Physics Department, Hanyang University, Ansan, Kyunggi-Do, 425-791, Korea
関連論文
- Line Width Variation due to Global Topography
- Microstructural and Electrical Properties of Ba_xSr_1-xTiO_3 Thin Films on Various Electrodes
- Threshold Energy Resist Model for Critical Dimension Prediction
- Characterization of 193 nm Chemically Amplified Resist during Post Exposure Bake and Post Exposure Delay
- Photoresist Exposure Parameter Extraction from Refractive Index Change during Exposure
- Numerical Investigation of Defect Printability in Extreme Ultraviolet (EUV) Reflector: Ru/Mo/Si Multilayer System
- The Extraction of Develop Parameters by Using Cross-Sectional Critical Shape Error Method
- Resist Pattern Collapse with Top Rounding Resist Profile
- Effect of Extreme Ultraviolet Light Scattering from the Rough Absorber and Buffer Side Wall