Resist Pattern Collapse with Top Rounding Resist Profile

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概要

• 論文の詳細を見る

• The pattern size is reduced as the device is more integrated. The resist deformation phenomenon has been a serious problem under 100 nm line width patterns. The most applicable model for an existing empirical result is chosen to create a simulation tool by comparing the two mechanical models when a pattern receives a distributed pressure or a concentrated pressure from the rinse liquid. Based on the chosen model, the critical aspect ratio with respect to line width and space can be calculated. The simulated results show that the pattern collapse phenomenon is reduced for a rounded top resist profile rather than for a flat top profile.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-06-15

著者

• Yoo Ji-yong

  Physics Department Hanyang University

• An Ilsin

  Physics Department Hanyang University

• Oh Hye-keun

  Physics Department Hanyang University

• Park Jun-teak

  Physics Department Hanyang University

• Lee Hyung-joo

  Physics Department Hanyang University

• Oh Hye-Keun

  Physics Department, Hanyang University, Ansan Kyunggi-Do 425-791, Korea

• An Ilsin

  Physics Department, Hanyang University, Ansan Kyunggi-Do 425-791, Korea

• Yoo Ji-yong

  Physics Department, Hanyang University, Ansan Kyunggi-Do 425-791, Korea

• Park Jun-teak

  Physics Department, Hanyang University, Ansan Kyunggi-Do 425-791, Korea

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