Plasma Metalorganic Chemical Vapor Deposition of Indium Oxide Thin Films
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概要
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Indium oxide (In_2O_3) thin films were obtained from trimethylindium and O_2 by the plasma metalorganic chemical vapor deposition method (MOCVD). A d.c. glow discharge was used to make the plasma. At a substrate temperature above 200℃, polycrystalline thin films were obtained, while no film was obtained by thermal MOCVD without plasma at the substrate temperature used in this study (<360℃). The transmittance and resistivity of the film depended on the molar ratio of trimethylindium and O_2.
- 社団法人応用物理学会の論文
- 1989-07-20
著者
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Maruyama Toshiro
Department Of Chemical Engineering Faculty Of Engineering Kyoto University
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Kitamura Toshio
Department Of Chemical Engineering Faculty Of Engineering Kyoto University
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Kitamura Toshio
Department Of Bioresources Chemistry Faculty Of Agriculture Okayama University
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