Cobalt Thin Films Prepared by Cherrnical Vapor Deposition from Cobalt Acetylacetonates
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概要
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Cobalt tlain films were prepared by low-temperature atmospheric-pressture chemical vapor deposition from cobalt(II) acetylacetonate and cobalt(III) acetylacetonate, The resistivity was low (10-30 μΩ・cm) and independentof film thickness, when the film thickness ranged from 150 to 700 nm. The thin films deposited from cobalt(III)acetylacetonate consisted of particles of uniform diatmeter, auad consequently an island structure of high resistivity was formed on the substrate when the film thickness was less than 150 nm. A similar islauud strucure of high resistivity but one order of maagnitude larger than that for the thin films was formed for the thick films deposited from cobalt(II) acetylacetonate.
- 社団法人応用物理学会の論文
- 1997-06-01
著者
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Maruyama Toshiro
Department Of Chemical Engineering Faculty Of Engineering Kyoto University
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Maruyama Toshiro
Department Of Chennical Engineering Faculty Of Engineering Kyoto University
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