Electrical Characterization of Silicon Dioxide Thin Films Prepared by Chemical Vapor Deposition from Tetrakis(diethylamino)silane and Ozone
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Silicon dioxide thin films were prepared by a low-temperatture atmospheric-pressvure chemical vapor deposition method from tetrakis(diethylamino)silane-ozone at a substrate temperature above 200℃. The relative dielectric constants of the films prepared in this study were lower than those for the films prepared from tetraethoxysilane-ozone. The relative dielectric constants for both films were nearly proportional to the absorbance of Si-0・ bonds at about 95Ocm^-1, indicating that an ionic polarization due to the nonbridging oxygen was closely connected with the relative dielectric constant of the film prepared using ozone at a low substrate temperature.
- 社団法人応用物理学会の論文
- 1997-07-15
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