Copper Oxide Thin Films Prepared from Copper Dipivaloylmethanate and Oxygen by Chemical Vapor Deposition
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概要
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Polycrystalline copper oxide thin films have been prepared from copper dipivaloylmethanate and oxygen by an atmospheric-pressure chemical vapor deposition method at a reaction temperature of 300℃. The deposition at oxygen partial pressure (p_0) ≦ 2.13kPa forms single-phase Cu_2O with [100] oriented polycrystalline structure, in which Cu^+ is partially substituted by Cu^<2+> in proportion to the increase in oxygen partial pressure from 1.06kPa. The optical energy gap decreases from 2.5 to 1.8eV with the increasing Cu^<2+> fraction in the film. At p_0 ≧ 2.48kPa, the crystalline CuO is formed with nonoriented crystalline Cu_2O. The content of the CuO phase markedly increase with increasing oxygen partial pressure.
- 社団法人応用物理学会の論文
- 1998-07-15
著者
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MARUYAMA Toshiro
Department of Chemical Engineering, Faculty of Engineering, Kyoto University
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Maruyama Toshiro
Department Of Chemical Engineering Faculty Of Engineering Kyoto University
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