Silicon Dioxide Thin Films Prepared Thermal Decomposition of Silicon Tetraacetate : Surfaces, Interfaces and Films
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概要
- 論文の詳細を見る
Silicon dioxide thin films were prepared by thermal decomposition of silicon tetraacetate. Acetone soIutions of the precursor material were applied to a glass substrate, then heated at 300-500℃ for 20 min in an air atmosphere. This method was superior to the sol-gel method in the raw solution and in the low heat-treatment temperature.
- 社団法人応用物理学会の論文
- 1988-12-20
著者
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ABURAI Koji
Department of Chemical Engineering, Kyoto University
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Aburai Koji
Department Of Chemical Engineering Faculty Of Engineering Kyoto University
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MARUYAMA Toshiro
Department of Chemical Engineering, Faculty of Engineering, Kyoto University
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Maruyama Toshiro
Department Of Chemical Engineering Faculty Of Engineering Kyoto University
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