Silicon Dioxide Thin Films Prepared by Chemical Vapor Deposition from Silicon Tetraacetate
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概要
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Silicon dioxide thin films were prepared by a low-temperature chemical vapor deposition method. The raw material was silicon tetraacetate which is nontoxic and easy to handle. At a reaction temperature above 150℃, the thin films were obtained with a high deposition rate. The reaction temperature and the deposition rate are comparable to the corresponding values in the chemical vapor depositions of SiO_2 from hydride and alkoxide. In addition, the deposition can be carried out in air. Silicon tetraacetate appears to offer a viable alternative to silicon hydride and alkoxide for low-temper-ature SiO_2 production.
- 社団法人応用物理学会の論文
- 1989-12-20
著者
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Maruyama Toshiro
Department Of Chemical Engineering Faculty Of Engineering Kyoto University
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SHIONOYA Jun
Department of Chemical Engineering, Faculty of Engineering, Kyoto University
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Shionoya Jun
Department Of Chemical Engineering Faculty Of Engineering Kyoto University
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