Maskless Patterning of Ferrite Film by Selected Area Film Growth in Aqueous Solution by "Laser-Enhanced Ferrite Plating"
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概要
- 論文の詳細を見る
By irradiating substrate with Ar-laser (λ=514.5 nm) beams, Fe_3O_4 films were deposited in an aqueous solution at a rate as high as acd660 nm/min. By synchronously moving the substrate during the plating process, we successfully drew letters of ferrite film patterned on a glass substrate by selected area growth without using any masks. This technique is useful for fabricating fine-patterned ferrite film devices (e.g., microwave circulators and isolators) using as a substrate such non-heat-resistant materials as GaAs ICs.
- 社団法人応用物理学会の論文
- 1992-04-15
著者
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Itoh Tomoyuki
Department Of Biological Mechanisms And Functions Graduate School Of Bioagricultural Sciences Nagoya
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Abe Masanori
Department Of Physical Electronics Tokyo Institute Of Technology
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Tamaura Y
Research Center For Carbon Recycling & Utilization Tokyo Institute Of Technology
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Tamaura Yutaka
Department Of Chemistry Tokyo Institute Of Technology
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Abe Masanori
Department Of Anesthesiology Faculty Of Medicine University Of The Ryukyus
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HORI Seiichiro
Department of Physical Electronics, Tokyo Institute of Technology
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ITOH Tomoyuki
Department of Physical Electronics, Tokyo Institute of Technology
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