Effect of Heating Probe on Reactively Sputtered TiO_2 Film Growth
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概要
- 論文の詳細を見る
In this paper we propose a simple method to ionize sputtered neutral Ti and added oxygen gas, by inserting a heating probe into the plasma space. The effect of bias voltage applied to the heating probe on the crystalline structure and optical properties was investigated for the TiO_2 films deposited by reactive sputtering using this method. In the films deposited with the heating probe applying positive bias voltage to the substrate, the rutile phase was grown on the Si(111) substrate at a low temperature, and this film showed better optical properties than the films prepared without bias voltage. These changes in crystalline and optical properties were attributed to the ionization and acceleration of Ti and oxygen particles.
- 社団法人応用物理学会の論文
- 1993-12-15
著者
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Okimura K
Tokai Univ. Kanagawa Jpn
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Shibata Akira
Department Of Applied Chemistry School Of Science And Engineering Kinki University
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Yamamoto Yukio
Department Of Agricultural Chemistry Faculty Of Agriculture Nagoya University
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Okimura Kunio
Department Of Electronics Tokai University
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MATUBARA Kakuei
Department of Electrical and Electronic Engineering, Yamaguchi University
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Yamamoto Yukio
Department Of Electrical Engineering Fukui National College Of Technology
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Shibata Akira
Department Of Electrical Engineering Fukui National College Of Technology
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Matubara K
Yamaguchi Univ. Ube Jpn
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Shibata Akira
Department 1st Internal Medicine, Niigata University School of Medicine
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Okimura Kunio
Department of Electrical and Electronic Engineering, Tokai University, Hiratsuka, Kanagawa 259-1292, Japan
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