Epitaxial Growth of Rutile TiO2 Films on MgO Substrate in Inductively Coupled Plasma-Assisted Sputtering
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概要
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Rutile TiO2 films were epitaxially grown on MgO(100) substrates by inductively coupled plasma-assisted sputtering. At the substrate temperature of 300°C, the prepared films showed epitaxial growth with relation of rutile TiO2(110)[001] $\parallel$ MgO(100)[011]. Post-annealing in atmospheric O2 at 600°C and 800°C improved the crystalline preference resulting in a full width at half maximum (FWHM) of rocking curve of 2.4° at 800°C. The films prepared by conventional sputtering also showed rutile TiO2 textured growth; however, annealing behavior revealed defective structures of deposited films.
- Japan Society of Applied Physicsの論文
- 2004-05-15
著者
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FURUMI Takahiro
Department of Electronics, Tokai University
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Furumi Takahiro
Department of Electronics, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
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Okimura Kunio
Department of Electrical and Electronic Engineering, Tokai University, Hiratsuka, Kanagawa 259-1292, Japan
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