Effect of Annealing with Ar Plasma Irradiation for Transparent Conductive Nb-Doped TiO2 Films on Glass Substrate
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概要
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Conductive Nb-doped TiO2 films (TiO2:Nb) on glass substrates formed via post annealing of as-deposited amorphous films are expected to be an alternative next-generation transparent conductive oxide (TCO). We investigated the effects of annealing with Ar plasma irradiation on TiO2:Nb films that had been grown on glass substrates by reactive sputtering. It was revealed that annealing at 300 °C with Ar plasma, in which the plasma density was as high as $6\times 10^{11}$ cm-3, induced a rapid decrease in resistivity to the order of $10^{-3}$ $\Omega$ cm within several minutes. Plasma-irradiation-induced oxygen defects were suggested to be responsible for the rapid decrease in resistivity rather than the activation of incorporated Nb atoms through crystallization. The film annealed with the high-density plasma for 20 min showed optical transmittance of approximately 80% for the visible wavelength region with a minimum resistivity of $1.5\times 10^{-3}$ $\Omega$ cm, demonstraiting the advantages of the proposed method for fabricating TiO2:Nb films as TCOs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-08-25
著者
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Hojo Mika
Department of Information Telecommunication and Electronics, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
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Okimura Kunio
Department of Electrical and Electronic Engineering, Tokai University, Hiratsuka, Kanagawa 259-1292, Japan
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