In-Plane Orientation and Annealing Behavior of Rutile TiO2 Films on MgO Substrate Prepared by Inductively Coupled Plasma-Assisted Sputtering
スポンサーリンク
概要
- 論文の詳細を見る
In-plane orientation and annealing behavior of Rutile TiO2 films grown on MgO (100) substrates by means of inductively coupled plasma-assisted sputtering were investigated. We deposited TiO2 films on relatively low temperature (${\leqq}400$°C) MgO substrates in Ar–O2 mixture gases. Several films were annealed in atmospheric O2 at 800°C for 60 min. X-ray $\phi$ scan measurements and AFM images revealed that rutile TiO2 film grows on MgO (100) substrate with two orientations of $\text{TiO$_{2}$ (110)[001]}\parallel\text{MgO (100)[011]}$ and $\text{TiO$_{2}$ (110)[001]}\parallel\text{MgO (100)[$01\bar{1}$]}$. Post annealing in atmospheric O2 at 800°C improved the crystalline preference of TiO2 film, however, formation of MgTiO3 interface layer was clearly shown by cross sectional TEM image and XPS depth analysis. Values of refractive index and band gap energy were evaluated from optical characteristics of the films. High refractive index of 2.65 at wavelength of 500 nm in as-deposited TiO2 film degraded to 2.0 in annealed film due to the formation of MgTiO3 interface layer. Through this study, we offer stable rutile (110) surface and a formation route of MgTiO3 dielectric layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-05-15
著者
-
FURUMI Takahiro
Department of Electronics, Tokai University
-
Okimura Kunio
Department of Electrical and Electronic Engineering, Tokai University, Hiratsuka, Kanagawa 259-1292, Japan
関連論文
- In-Plane Orientation and Annealing Behavior of Rutile TiO_2 Films on MgO Substrate Prepared by Inductively Coupled Plasma-Assisted Sputtering
- X-ray Diffraction Study of Electric Field-Induced Metal–Insulator Transition of Vanadium Dioxide Film on Sapphire Substrate
- Effect of Heating Probe on Reactively Sputtered TiO_2 Film Growth
- Optical Absorption Measurements of Sputtered Titanium Ions in RF Magnetron Sputtering (Short Note)
- Time-dependent Characteristics of Electric Field-induced Metal–Insulator Transition of Planer VO2/c-Al2O3 Structure
- Preparation of VO2 Films with Metal–Insulator Transition on Sapphire and Silicon Substrates by Inductively Coupled Plasma-Assisted Sputtering
- Electric-Field-Induced Multistep Resistance Switching in Planar VO2/$c$-Al2O3 Structure
- Changes in Lattice Parameters of VO2 Films Grown on $c$-Plane Al2O3 Substrates across Metal–Insulator Transition
- Epitaxial Growth of V2O3 Thin Films on c-Plane Al2O3 in Reactive Sputtering and Its Transformation to VO2 Films by Post Annealing
- In-Plane Orientation and Annealing Behavior of Rutile TiO2 Films on MgO Substrate Prepared by Inductively Coupled Plasma-Assisted Sputtering
- Growth of Highly Oriented CoCrTa films by Inductively Coupled Plasma-Assisted Sputtering
- Ion Densities and Ionization Fractions of Sputtered Titanium in Inductively Coupled Plasma Assisted Sputtering
- Effect of Annealing with Ar Plasma Irradiation for Transparent Conductive Nb-Doped TiO2 Films on Glass Substrate
- Epitaxial Growth of Rutile TiO2 Films on MgO Substrate in Inductively Coupled Plasma-Assisted Sputtering