Electric-Field-Induced Multistep Resistance Switching in Planar VO2/$c$-Al2O3 Structure
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概要
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The electric-field-induced resistance switching of vanadium dioxide (VO2) films grown on $c$-Al2O3(001) substrates was studied in planar devices with two terminal electrodes. We demonstrated multistep resistance switching in a device with dimensions of 5/1500 μm (electrode gap/electrode length), while only a single-step resistance switching was observed in a device with dimensions of 10/10 μm. Each step in the multistep resistance switching occurred within 100 ns and exhibited a time-independent constant value. Optical microscope observations of a filamentary current path in a VO2 layer imply that initial filamentary current path formation and its development are responsible for the multistep resistance switching. Temperature-controlled X-ray diffraction (XRD) measurements suggested the coexistence of regions with a variety of transition temperatures, which is considered to be closely related to the appearance of the multistep resistance switching. The multistep resistance switching in the VO2-based planar device is promising not only for functional electronic device applications but also as a fundamental research for switching mechanism in oxide materials.
- 2009-06-25
著者
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Okimura Kunio
Department Of Electronics Tokai University
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Sakai Joe
Laboratoire d'Électrodynamique des Matériaux Avancés (LEMA), UMR 6157 CNRS/CEA, Université François Rabelais, Parc de Grandmont 37200 Tours, France
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Ezreena Nurul
Department of Information Telecommunication and Electronics, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
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Sasakawa Yusuke
Department of Information Telecommunication and Electronics, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
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Okimura Kunio
Department of Electrical and Electronic Engineering, Tokai University, Hiratsuka, Kanagawa 259-1292, Japan
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