Secondary Electrorn Emission from Hydrogen-Implanted Graphite with Real Depth Profile of Hydrogen
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概要
- 論文の詳細を見る
An experimental hydrogen depth profile is applied to a Monte Carlo simulation of secondary electron emission from hydrogen-implanted graphite. Due to hydrogen implantation, the secondary electron yield increases but the electron backscattering coefficient does not clearly change. Through thermal annealing of the specimen at a temperature higher than 600℃, the secondary electron yield returns to that of a clean graphite without implantation.
- 社団法人応用物理学会の論文
- 1993-06-15
著者
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Ohya Kaoru
Faculty Of Engineering The University Of Tokushima
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Nishimura Kenji
Department Of Electrical Engineering Numazu College Of Technology
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Nishimura Kenji
Department Of Electrical Engineering Nutnazu College Of Technology
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Ohya Kaoru
Faculty Of Engineering The Universiry Of Tokushima
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Nishimura Kenji
Department Of Biology Keio University School Of Medicine
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