ZnTe-InAs Heterojunctions Prepared by Liquid-Phase Epitaxy
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概要
- 論文の詳細を見る
ZnTe-InAs heterojunctions are prepared by the liquid-phase epitaxial growth technique. InAs layers are grown from the In solutions on ZnTe substrates. The study on the optical transmittance reveals that InAs-ZnTe mixed-crystal layer exists at theboundary. The ZnTe-InAs heterojunction diodes show SCLC characteristics at forward bias. It is suggested that in the ZnTe substrates, high-resistivity layers are formed by the diffusion of In from the InAs layers. The forward I-V characteristics can be explained by the hole space-charge limited flow in the high-resistivity layers. By using Lampert theory, it is concluded that this layer has a trap density of about 1×10^<14>cm^<-3> and the trap level is located about 0.38eV above the valence band edge.
- 社団法人応用物理学会の論文
- 1972-07-05
著者
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Takahashi Kiyoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Moriizumi Toyosaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tokyo Institute Of Techno
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TAMURA Teiji
Department of Electronics, Tokyo Institute of Technology
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Tamura Teiji
Department Of Electronics Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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