Bright Spots in the Image of Silicon Vidicon
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概要
- 論文の詳細を見る
The origin of bright spots in the images of silicon vidicon is studied by investigating the etching patterns of the vidicon targets. It is found that (1) the bright spots are caused by a leaky diode which has a stacking fault generated during the course of oxidation in the (111) plane, and (2) there are two causes for stacking fault, that is, residual mechanical strain on the surface of the silicon wafer and grown-in defects.
- 社団法人応用物理学会の論文
- 1971-02-05
著者
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Matsui Junji
Central Research Labolatories Nippon Electric Co. Lid.
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Kawamura Tsutomu
Central Research Laboratories Nippon Electric Co. Ltd.
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SHIRAKI Hiromitsu
Central Research Laboratories, Nippon Electric Co., Ltd.
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HANAOKA Masafumi
Central Research Laboratories, Nippon Electric Co., Ltd.
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SASAKI Tokuo
Central Research Laboratories, Nippon Electric Co., Ltd.
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Sasaki Tokuo
Central Research Laboratories Nippon Electric Co. Ltd.
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Hanaoka Masafumi
Central Research Laboratories Nippon Electric Co. Ltd.
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Shiraki Hiromitsu
Central Research Laboratories Nippon Electric Co. Ltd.
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