Elimination of Stacking Faults in Silicon Wafers by HCl Added Dry O_2 Oxidation

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概要

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• Dislocation free silicon wafers, having a (100) plane surface, were oxidized in dry O_2 (dry O_2 oxidation) and dry O_2+HCl (HCl added dry O_2 oxidation) to examine the effects of HCl on generation of sacking fault. Frank (extrinsic) type stacking faults were caused by the oxidations. The defect size increased with increase of oxidation temperature at low temperature range and decreased with increase of oxidation temperature at high temperature range for both oxidizing atmospheres. Defect size was markedly smaller for HCl added dry O_2 oxidation. Elimination and shrinkage of existing stacking faults occured during HCl added dry O_2 oxidation. A new oxidation mechanism, which gives rise to the vacancy (silicaon) flow from (to) the oxide silicon interface to (from) the faulted defect, was proposed to explain the elimination and shrinkage.

• 社団法人応用物理学会の論文
• 1975-06-05

著者

• Shiraki Hiromitsu

  Central Research Laboratories Nippon Electric Co. Ltd.

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