Secondary Defect Generation Suppression in Heavily Boron Implanted Silicon Wafers by HCl Oxidation
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概要
- 論文の詳細を見る
Heavily boron implanted silicon wafers, having a surface parallel to the {100} plane, were oxidized in dry O_2 mixed with different amounts of HCl (HCl oxidation) to clarify the HCl effect on suppressing generation of secondary defects nucleated by ion implantation. For low HCl concentrations, large size and high density stacking faults were produced. With HCl concentration increase, stacking fault size became smaller without changing its density. At high HCl concentration (6%), complete generation suppression of the faults and effective secondary defect nuclei elimination were accomplished. A speculative discussion on the fault size reduction, fault generation suppression and fault nuclei elimination is given.
- 社団法人応用物理学会の論文
- 1977-11-05
著者
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Shiraki Hiromitsu
Central Research Laboratories Nippon Electric Co. Ltd.
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HOKARI Yasuaki
Central Research Laboratories, Nippon Electric Co., Ltd.
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Hokari Yasuaki
Central Research Laboratories Nippon Electric Co. Ltd.
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