Secondary Defect Generation Suppression and Diffusivity Restraint in Heavily Phosphorus Implanted Silicon by HCI Oxidation

概要

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Heavily phosphorus implanted silicon wafers were oxidized in dry O_2+HCI(HCI oxidation)and annealed in dry N_2+0.1% O_2 at 1150℃ for 30 minutes in order to clarify the effects of HCl in(i)suppressing secondary defect generation which may be caused by ion implantation and post-annealing treatment, and in(ii) restraining phosphorus diffusivity. Large size and high density stacking faults, which were produced in dry O_2 and low HCl oxidations, were reduced efficiently for concentrations of HCl of more than 3%. However, low density dislocation line nuclei still remained, even at concentration of 6% HCl. The elimination of defect nuclei at 6% HCl was almost the same as found in inert gas annealing. Phosphorus diffusivity was enhanced in the oxidizing atmosphere, but decreased with increasing concentration of HCl. It was effectively restrained for concentrations of HCl of more than 3%. These results indicate that both the restraint of impurity diffusivity and the reduction of lattice defects are caused by the presence of HCl, and that they are correlated with each other.
社団法人応用物理学会の論文
1979-05-05