Suppression of Stacking Fault Generation in Silicon Wafer by HCl Added to Dry O_2 Oxidation

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概要

• 論文の詳細を見る

• Dislocation free (001) plane surface silicon wafers were oxidized in dry O_2 mixed with small amounts of HCl (HCl oxidation) to clarify the effect of HCl on Frank type stacking fault generation during oxidation. The defect size was decreased with HCl concentration increase. Complete stacking fault generation suppression was observed for higher HCl concentration. Shrinkage and elimination of existing stacking faults occurred during the oxidation. Suppression, shrinkage, and elimination could be explained by the vacancy flow from the oxide silicon interface to the faulted defect during HCl oxidation.

• 社団法人応用物理学会の論文
• 1976-01-05

著者

• Shiraki Hiromitsu

  Central Research Laboratories Nippon Electric Co. Ltd.

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