228 by 248 Cell Charge-Coupled Image Sensor with Two-Level Overlapping Poly-Silicon Electrodes : B-4: IMAGING DEVICES

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Bright Spots in the Image of Silicon Vidicon
Video Defects in Charge-Coupled Image Sensors
228 by 248 Cell Charge-Coupled Image Sensor with Two-Level Overlapping Poly-Silicon Electrodes : B-4: IMAGING DEVICES
Reduction of Silicon Vidicon Dark Current by HCI Oxidation
Suppression of Stacking Fault Generation in Silicon Wafer by HCl Added to Dry O_2 Oxidation
Secondary Defect Generation Suppression in Heavily Boron Implanted Silicon Wafers by HCl Oxidation
Silicon Wafer Annealing Effect in Loop Defect Generation
Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl Oxidation
Elimination of Stacking Faults in Silicon Wafers by HCl Added Dry O_2 Oxidation
Dislocation Etch Pits on Solution Grown Gallium Phosphide
Secondary Defect Generation Suppression and Diffusivity Restraint in Heavily Phosphorus Implanted Silicon by HCI Oxidation

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