Reduction of Silicon Vidicon Dark Current by HCI Oxidation

スポンサーリンク

概要

• 論文の詳細を見る

• The silicon vidicon dark current was markedly reduced by forming the target oxide layer in a mixture of dry 0_2 and a small amount of HCI. Dark current of less than 0.6 nA, which is about ten times smaller than has ever been reported, was realized in a standard l" silicon vidicon. It was found that this dark current reduction was due to a decrease in the surface generation velocity and an increase in the carrier generation life time and that, in the low dark current targets, the bulk generation current was the major component of the dark current. Wafer annealings in nitrogen, performed after the oxidation or after the boron drive-in, were found useful in the HCI oxidized wafers for the reduction of dark current and spot-like images in the video display.

• 社団法人応用物理学会の論文
• 1975-12-05

著者

• Shiraki Hiromitsu

  Central Research Laboratories Nippon Electric Co. Ltd.

• Shiraki Hiromitsu

  Central Research Laboratories Nippon Electric Company Limited

関連論文

• Bright Spots in the Image of Silicon Vidicon
• Video Defects in Charge-Coupled Image Sensors
• 228 by 248 Cell Charge-Coupled Image Sensor with Two-Level Overlapping Poly-Silicon Electrodes : B-4: IMAGING DEVICES
• Reduction of Silicon Vidicon Dark Current by HCI Oxidation
• Suppression of Stacking Fault Generation in Silicon Wafer by HCl Added to Dry O_2 Oxidation
• Secondary Defect Generation Suppression in Heavily Boron Implanted Silicon Wafers by HCl Oxidation
• Silicon Wafer Annealing Effect in Loop Defect Generation
• Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl Oxidation
• Elimination of Stacking Faults in Silicon Wafers by HCl Added Dry O_2 Oxidation
• Dislocation Etch Pits on Solution Grown Gallium Phosphide

スポンサーリンク