Video Defects in Charge-Coupled Image Sensors
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概要
- 論文の詳細を見る
The origin of video defects (bright spots and bright lines) in Charge-Coupled Image Sensors was studied. Area image sensors with sensor, memory and shift register regions and linear imagesensors with a sensor region and two shift registers were investigated by primarily looking for a correspondence between video defects on a video display and etching patterns revealed on the device surface. Video defects were fairly well correlated to stacking faults and their derivatives lying in the sensor region. When these lattice defects existed in a shift register, they brought about both video defects and increase in the dark current in the register. The number of the sevideo defects was greatly reduced by phosphorous diffusions performed on the back surface of the device.
- 社団法人応用物理学会の論文
- 1977-04-05
著者
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Shiraki Hiromitsu
Central Research Laboratories Nippon Electric Co. Ltd.
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HOKARI Yasuaki
Central Research Laboratories, Nippon Electric Co., Ltd.
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Hokari Yasuaki
Central Research Laboratories Nippon Electric Co. Ltd.
関連論文
- Bright Spots in the Image of Silicon Vidicon
- Video Defects in Charge-Coupled Image Sensors
- 228 by 248 Cell Charge-Coupled Image Sensor with Two-Level Overlapping Poly-Silicon Electrodes : B-4: IMAGING DEVICES
- Reduction of Silicon Vidicon Dark Current by HCI Oxidation
- Suppression of Stacking Fault Generation in Silicon Wafer by HCl Added to Dry O_2 Oxidation
- Secondary Defect Generation Suppression in Heavily Boron Implanted Silicon Wafers by HCl Oxidation
- Silicon Wafer Annealing Effect in Loop Defect Generation
- Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl Oxidation
- Elimination of Stacking Faults in Silicon Wafers by HCl Added Dry O_2 Oxidation
- Dislocation Etch Pits on Solution Grown Gallium Phosphide
- Secondary Defect Generation Suppression and Diffusivity Restraint in Heavily Phosphorus Implanted Silicon by HCI Oxidation