Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl Oxidation
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概要
- 論文の詳細を見る
Dislocation free silicon wafers were oxidized in dry O_2 and dry O_2 + HCl (HCl oxidation) to clarify the effects of HCl on the generation and expansion of Frank type stacking faults. These faults were produced from grown-in defects and surface mechanical damage. For day O_2 oxidation, stacking faults expanded with increasing oxidation time except for oxidation at extremely high temperatures. For HCl oxidation, they generally expanded during the first stage of oxidation, reached a maximum and finally sharank. A complete suppression of stacking fault generation was observed for higher HCl concentrations. The elimination of grown-in defects occurred during HCl oxidation. The suppression of stacking fault generation and expansion, and the elimination of grown-in defects are considered to occur clue to the interaction of these defects with vacancies, which are produced on the silicon surface during HCl oxidation.
- 社団法人応用物理学会の論文
- 1976-01-05
著者
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Shiraki Hiromitsu
Central Research Laboratories Nippon Electric Co. Ltd.
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SHIRAKI Hiromitsu
Central Research Laboratories, Nippon Electric Co., Lid.
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