Injection-Enhanced Dislocation Glide under Uniaxial Stress in GaAs-(GaAl)As Double Heterostructure Laser
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概要
- 論文の詳細を見る
By applying uniaxial stresses of the order of 10^8-9 dyn/cm^2 to (GaAs-(GaAl)As DH lasers in addition to the forward bias current, the development of (110) straight dark lines is observed in the electron beam induced junction current mode using an SEM. They are identified by a TEM as glide dislocations of the (110) / {111} slip system that reflect the resolved shear stress on the slip planes. It is noted that, when no carriers are injected, these dislocations can scarcely be observed in the specimen with an external uniaxial stress. This fact suggests that the enhancem enteffect of carrier injection on the dislocation glide motion. It is also observed that once (110)drak lines are introduced in the active layer, the (100) dark lines propagate from these (110)drak lines, indicating that the process-induced internal stresses can give rise to the generation of the (100) dark lines.
- 社団法人応用物理学会の論文
- 1977-02-05
著者
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Ishida Koichi
Central Research Laboratories Nippon Electric Company Ltd.
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MATSUI Junji
Central Research Laboratories, Nippon Electric Company, Ltd.
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Matsui Junji
Central Research Labolatories Nippon Electric Co. Lid.
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Kamejima Taibun
Central Research Laboratories Nippon Electric Co. Ltd.
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Kamejima Taibun
Central Research Labolatories Nippon Electric Co. Lid.
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Ishida Koichi
Central Research Labolatories Nippon Electric Co. Lid.
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