Lasing Characteristics in a Degraded GaAs-Al_xGa_<1-x>As Double Heterostructure Laser
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概要
- 論文の詳細を見る
Formation of "dark lines", which are crystalline defects observed in degraded GaAs-Al_xGa_<1-x>As DH lasers, introduce degradation of lasing characteristics such as increase of the threshold current density, and decrease of the spontaneous emission intensity and of the external differential quantum efficiency. The number of dark lines increases with the progress of degradation. In this paper the dark line is taken as the nonradiative short life time region having an effective absorption width of〜5 μm, an effective absorption coefficient of〜200 cm^<1-x> and a current density of about twice as much as that in the undegraded region. Under this assumption, the lasing characteristics in degraded lasers are explained as a function of the number of dark lines. In degradation, the increase of the threshold current density is due to an increase of the cavity loss and an decrease of the gain coefficient attributed to dark lines.
- 社団法人応用物理学会の論文
- 1974-05-05
著者
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Yonezu Hiroo
Central Research Laboratories Nippon Electric Co. Lid.
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Kamejima Taibun
Central Research Laboratories Nippon Electric Co. Ltd.
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Kamejima Taibun
Central Research Labolatories Nippon Electric Co. Lid.
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SAKUMA Isamu
Central Research Laboratories, Nippon Electric Co., Ltd.
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UENO Masayasu
Central Research Laboratories, Nippon Electric Co., Ltd.
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Sakuma Isamu
Central Research Laboratories Nippon Electric Co. Lid.
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Sakuma Isamu
Central Research Laboratories Nippon Electric Co. Ltd.
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Ueno Masayasu
Central Research Laboratories Nippon Electric Co. Ltd.
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YONEZU Hiroo
Central Research Laboratories, Nippon Electric Co., Ltd.,
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