Threshold Current Density and Lasing Transverse Mode in a GaAs-Al_xGa_<1-x>As Double Heterostructure Laser

概要

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The relation between threshold current density J_<th> and the lasing transverse mode is obtained analytically as a function of the active layer thickness for GaAs-Al_xGa_<1-x>As three layer double heterostructure lasers. The experimental results for lasers with x≃0.43 and x≃0.3 are in good agreement with the calculated results, assuming that the fractional differences of refractive index are 5% and 3.5%, respectively, and the absorption coefficient in all the layers is 10 cm^<-1>. J_<th> of lasers with a very thin active layer is influenced markedly by the dependence of the gain on the injected carrier density. The gain must depend on the current raised to some power larger than 1 in order to reduce J_<th> in a very thin active layer. Another method to reduce J_<th> is also discussed using the calculated results.
社団法人応用物理学会の論文
1973-10-05