Gain Factor and Loss in a Ga_xAl_<1-x>As-GaAs Laser Diode

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1970-02-05

著者

• NANNICHI Yasuo

  Central Research Laboratories, Nippon Electric Company, Limited

• Nannichi Yasuo

  Central Research Laboratories Nippon Electric Co. Ltd.

• Yonezu Hiroo

  Central Research Laboratories Nippon Electric Co. Lid.

• SAKUMA Isamu

  Central Research Laboratories, Nippon Electric Co., Ltd.

• Sakuma Isamu

  Central Research Laboratories Nippon Electric Co. Lid.

• Sakuma Isamu

  Central Research Laboratories Nippon Electric Co. Ltd.

• YONEZU Hiroo

  Central Research Laboratories, Nippon Electric Co., Ltd.,

関連論文

• Determination of the Composition of Ga_xAl_As from the Photoresponse of Schottky Barriers
• Rapid Degradation in Double-Heterostructure Lasers. : I. Proposal of a New Model for the Directional Growth of Dislocation Networks
• Continuous Operation of Junction Lasers at Room Temperature
• New Stripe Geometry Laser with High Quality Lasing Characteristics by Horizontal Transverse Mode Stabilization : A Refractive Index Guiding with Zn Doping
• A GaAs-Al_xGa_As Double Heterostructure Planar Stripe Laser
• Gain Factor and Loss in a Ga_xAl_As-GaAs Laser Diode
• Horizontal Mode Deformation and Anomalous Lasing Properties of Stripe Geometry Injection Lasers -Experiment
• CW Optical Power from (Al・Ga)As Double Heterostructure Lasers
• Defect Growth in (Ga・Al)As Double Heterostructure Lasers
• Lasing Characteristics in a Degraded GaAs-Al_xGa_As Double Heterostructure Laser
• Threshold Current Density and Lasing Transverse Mode in a GaAs-Al_xGa_As Double Heterostructure Laser
• Analysis on the Wave Confinement in the Ga_xAl_ As-GaAs Laser Diode
• Quenching Response on a GaAs Dual Laser
• Annealing Effects of a Diffused GaAs Junction Laser

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