Continuous Operation of Junction Lasers at Room Temperature
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1971-02-05
著者
-
Nishida Katsuhiko
Central Research Laboratories Nippon Electric Co. Ltd.
-
Nishida Katsuhiko
Central Research Laboratories Nippon Electric Co. Lid.
-
NANNICHI Yasuo
Central Research Laboratories, Nippon Electric Company, Limited
-
Saito Fujio
Central Research Laboratories Nippon Electric Co. Ltd.
-
Nannichi Yasuo
Central Research Laboratories Nippon Electric Co. Ltd.
-
Yonezu Hiroo
Central Research Laboratories Nippon Electric Co. Lid.
-
SAKUMA Isamu
Central Research Laboratories, Nippon Electric Co., Ltd.
-
KOBAYASHI Koro
Central Research Laboratories, Nippon Electric Co., Ltd.
-
Kobayashi Koro
Laser Equipment Development Division Nippon Electric Co. Lid.
-
Sakuma Isamu
Central Research Laboratories Nippon Electric Co. Lid.
-
Sakuma Isamu
Central Research Laboratories Nippon Electric Co. Ltd.
-
Kobayashi Kohroh
Laser Equipment Development Division Nippon Electric Co. Lid.
-
YONEZU Hiroo
Central Research Laboratories, Nippon Electric Co., Ltd.,
関連論文
- Photocapacitance Studies on Deep Levels in GaAs and Al_xGa_As Liquid Phase Epitaxial Layers
- Determination of the Composition of Ga_xAl_As from the Photoresponse of Schottky Barriers
- Threshold Current Density and Power Saturation in Read Diode
- Rapid Degradation in Double-Heterostructure Lasers. : I. Proposal of a New Model for the Directional Growth of Dislocation Networks
- Continuous Operation of Junction Lasers at Room Temperature
- New Stripe Geometry Laser with High Quality Lasing Characteristics by Horizontal Transverse Mode Stabilization : A Refractive Index Guiding with Zn Doping
- A GaAs-Al_xGa_As Double Heterostructure Planar Stripe Laser
- Gain Factor and Loss in a Ga_xAl_As-GaAs Laser Diode
- Life Test of GaAs DH Lasers at Room Temperature
- Horizontal Mode Deformation and Anomalous Lasing Properties of Stripe Geometry Injection Lasers -Experiment
- CW Optical Power from (Al・Ga)As Double Heterostructure Lasers
- Defect Growth in (Ga・Al)As Double Heterostructure Lasers
- Lasing Characteristics in a Degraded GaAs-Al_xGa_As Double Heterostructure Laser
- Threshold Current Density and Lasing Transverse Mode in a GaAs-Al_xGa_As Double Heterostructure Laser
- Analysis on the Wave Confinement in the Ga_xAl_ As-GaAs Laser Diode
- Quenching Response on a GaAs Dual Laser
- Dislocation-Free Junctions Formed by Diffusing Gallium and Boron into Si
- Avalanche Multiplication Enhancement along Dislocation Lines in a Thermally Diffused Junction
- Correlation between Laser Performance and Crystal Homogeneities of Ruby Laser Rods
- Optimization of Multiplication Factor of Avalanche Photodiode
- Effect of Donor Density on Avalanche Photomultiplication in Silicon P^+N Junction
- Operation of a Laser-Pumped Rudy Maser at 77°K
- Annealing Effects of a Diffused GaAs Junction Laser
- Photochemical Display : A New Type of Display Device : B-3: DISLLAY DEVICES