Effect of Donor Density on Avalanche Photomultiplication in Silicon P^+N Junction

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1969-01-05

著者

• Nishida Katsuhiko

  Central Research Laboratories Nippon Electric Co. Lid.

関連論文

• Photocapacitance Studies on Deep Levels in GaAs and Al_xGa_As Liquid Phase Epitaxial Layers
• Determination of the Composition of Ga_xAl_As from the Photoresponse of Schottky Barriers
• Threshold Current Density and Power Saturation in Read Diode
• Continuous Operation of Junction Lasers at Room Temperature
• Life Test of GaAs DH Lasers at Room Temperature
• Dislocation-Free Junctions Formed by Diffusing Gallium and Boron into Si
• Avalanche Multiplication Enhancement along Dislocation Lines in a Thermally Diffused Junction
• Correlation between Laser Performance and Crystal Homogeneities of Ruby Laser Rods
• Optimization of Multiplication Factor of Avalanche Photodiode
• Effect of Donor Density on Avalanche Photomultiplication in Silicon P^+N Junction

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