Optimization of Multiplication Factor of Avalanche Photodiode

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概要

• 論文の詳細を見る

• General formulas for the photomultiplication factor M_p are derived by considering the dark currernt injected into the avalanche region and the space charge effect due to the avalanche current. The numerical calculations were carried out in case of the silicon PN junction. The optimum impurity concentration to maximize M_p in the avalanche region is derived for a given junction area and a given load resistance. The analyses also indicate M_p is much improved with decreasing the dark current. The analytical results are well confirmed in the silicon P^+PNN^+ diode with an engraved guard ring. The junction uniformity was improved by gallium diffusion (P) preceding boron diffusion (P^+). Both the spatial variation of M_p in the junction plane and the avalanche noise were reduced to one tenth of those of the conventional P^+N junction diodes.

• 社団法人応用物理学会の論文
• 1970-05-05

著者

• Nishida Katsuhiko

  Central Research Laboratories Nippon Electric Co. Lid.

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