Photocapacitance Studies on Deep Levels in GaAs and Al_xGa_<1-x>As Liquid Phase Epitaxial Layers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1976-11-05
著者
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Nishida Katsuhiko
Central Research Laboratories Nippon Electric Co. Ltd.
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Nishida Katsuhiko
Central Research Laboratories Nippon Electric Co. Lid.
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UJI Toshio
Central Research Laboratories, Nippon Electric Co., Lid.
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Uji Toshio
Central Research Laboratories Nippon Electric Co. Lid.
関連論文
- Photocapacitance Studies on Deep Levels in GaAs and Al_xGa_As Liquid Phase Epitaxial Layers
- Determination of the Composition of Ga_xAl_As from the Photoresponse of Schottky Barriers
- Threshold Current Density and Power Saturation in Read Diode
- Continuous Operation of Junction Lasers at Room Temperature
- Life Test of GaAs DH Lasers at Room Temperature
- Dislocation-Free Junctions Formed by Diffusing Gallium and Boron into Si
- Avalanche Multiplication Enhancement along Dislocation Lines in a Thermally Diffused Junction
- Deep Levels in the n-Al_Ga_As Layer of (ALGa)As Double-Heterostructure Lasers
- Correlation between Laser Performance and Crystal Homogeneities of Ruby Laser Rods
- Optimization of Multiplication Factor of Avalanche Photodiode
- Effect of Donor Density on Avalanche Photomultiplication in Silicon P^+N Junction