Annealing Effects of a Diffused GaAs Junction Laser

概要

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The annealing effect, namely the reduction of the threshold current densities in diffused type GaAs junction lasers at room temperature, was investigated. The optimum annealing temperature changes with the concentration of impurity in the substrate. It was found that annealing 2h at 900℃ and 2h at 950℃ is the best for 1.1×10^<18> and 9.3×10^<18>cm^<-3> Te doped substrates, respectively. In a lightly doped diode the improvement of internal quantum efficiency is decisive for the reduction of threshold current density. In a highly doped diode the reduction of diffraction loss should also be considered. Further band tailing does not occur in the lightly doped diode by annealing.
社団法人応用物理学会の論文
1969-06-05