Rapid Degradation in Double-Heterostructure Lasers. : I. Proposal of a New Model for the Directional Growth of Dislocation Networks
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1975-10-05
著者
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NANNICHI Yasuo
Central Research Laboratories, Nippon Electric Company, Limited
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Nannichi Yasuo
Central Research Laboratories Nippon Electric Co. Ltd.
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Nannichi Yasuo
Central Research Laboratories Nippon Electric Company Ltd.
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Ishida Koichi
Central Research Laboratories Nippon Electric Company Ltd.
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MATSUI Junji
Central Research Laboratories, Nippon Electric Company, Ltd.
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Matsui Junji
Central Research Laboratories Nippon Electric Company Ltd.
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Matsui Junji
Central Research Labolatories Nippon Electric Co. Lid.
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Ishida Koichi
Central Research Labolatories Nippon Electric Co. Lid.
関連論文
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- Rapid Degradation in Double-Heterostructure Lasers. : II. Semiquantitative Analyses on the Propagation of Dark Line Defects
- Rapid Degradation in Double-Heterostructure Lasers. : I. Proposal of a New Model for the Directional Growth of Dislocation Networks
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- Gain Factor and Loss in a Ga_xAl_As-GaAs Laser Diode
- Injection-Enhanced Dislocation Glide under Uniaxial Stress in GaAs-(GaAl)As Double Heterostructure Laser
- Dislocation-Free Junctions Formed by Diffusing Gallium and Boron into Si
- Avalanche Multiplication Enhancement along Dislocation Lines in a Thermally Diffused Junction
- Spotty Defects in Oxidized Floating-Zoned Dislocation-Free Silicon Crystals
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