Spotty Defects in Oxidized Floating-Zoned Dislocation-Free Silicon Crystals
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概要
- 論文の詳細を見る
Spotty defect images are observed in X-ray diffraction topographs of floating-zoned dislocation-free silicon crystals subjected to thermal oxidation. The strain vector of the defects is of (1/3)[111] type. The defect images in the topographs disappear when the crystals are subjected to heat treatment at 1350℃ in argon atmosphere. It seems that the defect images result from the extrinsic stacking faults derived from oxygen aggregates which are formed by the interaction of the strain center appearing as a shallow etch pit and the atom of dissolved oxygen. The extrinsic stacking fault is formed by the vacancy emission from surrounding dislocation loops.
- 社団法人応用物理学会の論文
- 1972-02-05
著者
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Matsui Junji
Central Research Labolatories Nippon Electric Co. Lid.
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Kawamura Tsutomu
Central Research Laboratories Nippon Electric Co. Ltd.
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