Transparent X-Ray Lithography Masks
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-05-20
著者
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MATSUI Junji
Central Research Laboratories, Nippon Electric Company, Ltd.
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Ono Toshiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Matsui Junji
Central Research Labolatories Nippon Electric Co. Lid.
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EBATA Toshiki
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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SEKIMOTO Misao
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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SUZUKI Katsumi
Central Research Laboratories, Nippon Electric Co., Ltd.
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NAKAYAMA Satoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Ebata Toshiki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Sekimoto Misao
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Sekimoto Misao
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation:(pre
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Suzuki Katsumi
Central Research Laboratories Nippon Electric Co. Ltd.
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Nakayama Satoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Ono Toshiro
Musashino Electrical Communication Laboratory N.t.t
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MATSUI Junji
Central Research Laboratories, Nippon Electric Co., Ltd.
関連論文
- Rapid Degradation in Double-Heterostructure Lasers. : II. Semiquantitative Analyses on the Propagation of Dark Line Defects
- Rapid Degradation in Double-Heterostructure Lasers. : I. Proposal of a New Model for the Directional Growth of Dislocation Networks
- High-Resolution Thick Mask Pattern Fabrication for X-Ray Lithography
- Transparent X-Ray Lithography Masks
- Preparation of X-Ray Lithography Masks with Large Area Sandwich Structure Membrane
- Ion-Bombardment-Induced Improvement of Photoresist Mask Properties for RF Sputter-Etching
- Injection-Enhanced Dislocation Glide under Uniaxial Stress in GaAs-(GaAl)As Double Heterostructure Laser
- Silicon Nitride Single-Layer X-Ray Mask
- X-Ray Silicon Target Preparation for X-Ray Lithographic System
- Dislocation-Free Junctions Formed by Diffusing Gallium and Boron into Si
- Avalanche Multiplication Enhancement along Dislocation Lines in a Thermally Diffused Junction
- Spotty Defects in Oxidized Floating-Zoned Dislocation-Free Silicon Crystals
- Bright Spots in the Image of Silicon Vidicon
- Torsional Impulsive Response of an Elastic Half-Space due to a Rigid Circular Cylinder
- Si_3N_4-Polyimide-SiO_2 Complex Membrane X-Ray Lithography Mask