X-Ray Silicon Target Preparation for X-Ray Lithographic System
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-10-05
著者
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Saito Yasunao
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Yoshihara Hideo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation
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Kiuchi Mikiho
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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NAKAYAMA Satoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Nakayama Satoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Transparent X-Ray Lithography Masks
- Very Steep Profile Resist Pattern Preparation by Reactive Ion Etching with Ar+CH_4 Gas Mixture
- Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma
- Preparation of MnBi by Enhanced Activated Reactive Evaporation Process
- Silicon Nitride Single-Layer X-Ray Mask
- Preparation of Si-C Films by Plasma Deposition Process with Neutralization
- X-Ray Silicon Target Preparation for X-Ray Lithographic System
- Effects of Photoelectrons and Auger Electrons on Contrast and Resolution in X-Ray Lithography
- Synthesis of Titanium Nitride by Enhanced ARE Process
- Ion Effect on γ-Al_2O_3 Films by Enhanced ARE Process
- Synthesis of SiC Films by Plasma Deposition Process