Effects of Photoelectrons and Auger Electrons on Contrast and Resolution in X-Ray Lithography

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概要

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• The effects of photoelectrons and Auger electrons from the X-ray mask on the contrast and resolution were investigated in the replication of submicron resist patterns in X-ray lithography. A resist thinner than 550 Å was exposed to electrons generated by an Si-N membrane. The effect of electrons from the Au absorber is observed even with a 1 μm thick Au absorber pattern, because of the continuous radiation generated, shorter than the characteristic radiation. A polymer film coating on the Au absorber pattern increases the contrast of the mask, because electrons from the X-ray mask are absorbed by the polymer film.

• 社団法人応用物理学会の論文
• 1982-01-05

著者

• Yoshihara Hideo

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Yoshihara Hideo

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation

• Saitoh Yasunao

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• WATANABE Iwao

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Watanabe Iwao

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

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• X-Ray Silicon Target Preparation for X-Ray Lithographic System
• Effects of Photoelectrons and Auger Electrons on Contrast and Resolution in X-Ray Lithography
• Synthesis of Titanium Nitride by Enhanced ARE Process
• Ion Effect on γ-Al_2O_3 Films by Enhanced ARE Process
• Synthesis of SiC Films by Plasma Deposition Process

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