Very Steep Profile Resist Pattern Preparation by Reactive Ion Etching with Ar+CH_4 Gas Mixture
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概要
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The resist sputter-etching characteristics and the deposition film morphology on a fine pattern were investigated. The resist pattern profile can be controlled by the Ar ion energy with a reduction in the resist pattern width. The hydro-carbon film deposition rate on the top edge of the fine pattern is higher than that on the sidewall. For fine pattern reformation, we attempted to combine the Ar sputter-etching effect with the hydro-carbon film deposition effect using CH_4 gas. The resist pattern is reformed with an Ar+CH_4 gas mixture plasma with no reduction in the resist pattern width.
- 社団法人応用物理学会の論文
- 1981-11-05
著者
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Yoshihara Hideo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Yoshihara Hideo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation
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Matsuo Seitaro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Saitoh Yasunao
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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WATANABE Iwao
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Watanabe Iwao
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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