Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source

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概要

• 論文の詳細を見る

• A broad beam ion source using a microwave electron cyclotron resonance (ECR) discharge has been newly developed, giving high reliability in operation. The ion source operates at gas pressures higher than about 3×10^<-5> Torr, and an ion current density of 1 mA/cm^2 is obtained at an ion extraction voltage of 1000 V. By introducing C_4F_8 and SiCl_4 into the ion source, SiO_2 and Al are etched at rates greater than 1000 Å/min, with high selectivities and high-accuracy pattern transfer.

• 社団法人応用物理学会の論文
• 1982-01-05

著者

• Matsuo Seitaro

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• ADACHI Yoshio

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Adachi Yoshio

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Etching Characteristics of Various Materials by Plasma Reactive Sputter Etching
• Very Steep Profile Resist Pattern Preparation by Reactive Ion Etching with Ar+CH_4 Gas Mixture
• Preferential SiO_2 Etching on St Substrate by Plasma Reactive Sputter Etching
• Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source
• Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma
• Effect of Dark Space in RF Glow Discharge on Plasma Etching Characteristics
• An Analytical Treatment on the Pattern Formation Process by Sputter Etching with a Mask

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