Preferential SiO_2 Etching on St Substrate by Plasma Reactive Sputter Etching
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-01-05
著者
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Matsuo Seitaro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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TAKEHARA Yumiko
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Takehara Yumiko
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Etching Characteristics of Various Materials by Plasma Reactive Sputter Etching
- Very Steep Profile Resist Pattern Preparation by Reactive Ion Etching with Ar+CH_4 Gas Mixture
- Preferential SiO_2 Etching on St Substrate by Plasma Reactive Sputter Etching
- Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source
- Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma
- Effect of Dark Space in RF Glow Discharge on Plasma Etching Characteristics
- An Analytical Treatment on the Pattern Formation Process by Sputter Etching with a Mask