Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma
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概要
- 論文の詳細を見る
The plasma deposition apparatus developed in this study can realize a deposition of dense and high quality thin films, such as Si_3N_4 and SiO_2, without the need for substrate heating. It does this by enhancing the plasma excitation efficiency at low gas pressures (10<-4> Torr) and by the acceleration effect of ions with moderate energies (10 to 20 eV), using a microwave ECR (Electron Cyclotron Resonance) excited plasma, and a plasma stream extraction onto the specimen table by a divergent magnetic field method. The Si_3N_4 and SiO_2 films deposited are comparable to those prepared by high temperature CVD and thermal oxidation, respectively, in evaluations such as by buffered HF solution etch rate measurement.
- 社団法人応用物理学会の論文
- 1983-04-20
著者
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Matsuo Seitaro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kiuchi Mikiho
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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