An Analytical Treatment on the Pattern Formation Process by Sputter Etching with a Mask

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概要

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• The pattern formation process, in which a substrate with a patterned mask is sputter-etched, is investigated by means of a theoretical analysis based on the dependence of the etch rate on the angle of ton incidence V(θ). By introducing a characteristic curve, determined only by function V(θ), the cross-sectional profile generated by masking cart be predicted. For various factors, such as the etch rates of the mask and the substrate V_1 and V_2 and the inclination angle of the mask pattern edge θ_1, the side-wall slope of a pattern machined into the substrate surface θ_2 mostly depends only on the ratio of the etch rates V_2/V_1, and it increases discontinuously for V_2/V_1>1. Depending on whether V_1<V_2 or V_1>V_2, the pattern formation processes are classified into two types. High resolution and sharply defined patterns are usually obtained under the condition V_1 < V_2.

• 社団法人応用物理学会の論文
• 1976-07-05

著者

• Matsuo Seitaro

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

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• An Analytical Treatment on the Pattern Formation Process by Sputter Etching with a Mask

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